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| CMXT2207 SURFACE MOUNT SUPERminiTM DUAL COMPLEMENTARY SILICON TRANSISTOR Central DESCRIPTION: TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMXT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, designed for small signal general purpose and switching applications. MARKING CODE: X07 SOT-26 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA NPN 75 40 6.0 600 350 -65 to +150 357 PNP 60 60 5.0 UNITS V V V mA mW C C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) NPN PNP SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V 10 ICBO VCB=50V 10 ICBO VCB=60V, TA=125C 10 ICBO VCB=50V, TA=125C 10 IEBO VEB=3.0V 10 ICEV VCE=60V, VEB=3.0V 10 ICEV VCE=30V, VBE=0.5V 50 BVCBO IC=10A 75 60 BVCEO IC=10mA 40 60 BVEBO IE=10A 6.0 5.0 VCE(SAT) IC=150mA, IB=15mA 0.3 0.4 VCE(SAT) IC=500mA, IB=50mA 1.0 1.6 VBE(SAT) IC=150mA, IB=15mA 0.6 1.2 1.3 VBE(SAT) IC=500mA, IB=50mA 2.0 2.6 hFE VCE=10V, IC=0.1mA 35 75 hFE VCE=10V, IC=1.0mA 50 100 hFE VCE=10V, IC=10mA 75 100 hFE VCE=10V, IC=150mA 100 300 100 300 hFE VCE=1.0V, IC=150mA 50 hFE VCE=10V, IC=500mA 40 50 fT VCE=20V, IC=20mA, f=100MHz 300 fT VCE=20V, IC=50mA, f=100MHz 200 UNITS nA nA A A nA nA nA V V V V V V V MHz MHz R2 (06-August 2003) Central TM CMXT2207 SURFACE MOUNT SUPERminiTM DUAL COMPLEMENTARY SILICON TRANSISTOR Semiconductor Corp. ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) PNP NPN SYMBOL TEST CONDITIONS MIN MAX MIN MAX Cob VCB=10V, IE=0, f=1.0MHz 8.0 8.0 Cib VEB=0.5V, IC=0, f=1.0MHz 25 Cib VEB=2.0V, IC=0, f=1.0MHz 30 hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 8.0 hie VCE=10V, IC=10mA, f=1.0kHz 0.25 1.25 hre VCE=10V, IC=1.0mA, f=1.0kHz 8.0 hre VCE=10V, IC=10mA, f=1.0kHz 4.0 hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 300 hfe VCE=10V, IC=10mA, f=1.0kHz 75 375 hoe VCE=10V, IC=1.0mA, f=1.0kHz 5.0 35 hoe VCE=10V, IC=10mA, f=1.0kHz 25 200 rb'Cc VCB=10V, IE=20mA, f=31.8MHz 150 NF VCE=10V, IC=100mA, RS=1.0k, f=1.0kHz 4.0 ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 45 td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 10 10 tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA 25 40 toff VCC=6.0V, IC=150mA, IB1=IB2=15mA 100 ts VCC=30V, IC=150mA, IB1=IB2=15mA 225 ts VCC=6.0V, IC=150mA, IB1=IB2=15mA 80 tf VCC=30V, IC=150mA, IB1=IB2=15mA 60 tf VCC=6.0V, IC=150mA, IB1=IB2=15mA 30 UNITS pF pF pF k k x10-4 x10-4 mhos mhos ps dB ns ns ns ns ns ns ns ns SOT-26 CASE - MECHANICAL OUTLINE 6 5 4 Q2 Q1 1 2 3 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: X07 R2 (06-August 2003) |
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